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| LED - Chip Preliminary Radiation Blue Type Standard 10.04.2007 Technology InGaN/Al2O3 EL-470-31-1 rev. 02/07 Electrodes Both on top side 1000 typ. dimensions (25) m P typ. thickness 90 (10) m contact metalization gold alloy, 1.5 m backside metalization N N P aluminium alloy, 1.0 m Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Forward voltage1) Reverse voltage Radiant power Radiant power1,2) Luminous intensity1) Peak wavelength Dominant wavelength Spectral bandwidth at 50% Switching time 1) 2) Symbol Min Typ Max Unit IF = 20 mA IF = 350 mA IR = 10 A IF = 20 mA IF = 350 mA IF = 350 mA IF = 350 mA IF = 350 mA IF = 350 mA IF = 20 mA VF VF VR e e V P P 0.5 tr, tf 465 6000 5 8.8 2.7 3.24 3.0 3.7 V V V 11.5 150 6500 467 470 35 60 475 mW mW mcd nm nm nm ns Measured on bare chip on TO-18 header information only Labeling Type EL-470-31-1 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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